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DISCRETE SEMICONDUCTORS
DATA SHEET
KMZ11B1 Magnetic field sensor
Preliminary specification Supersedes data of 1996 Nov 08 File under Discrete Semiconductors, SC17 1996 Dec 11
Philips Semiconductors
Preliminary specification
Magnetic field sensor
DESCRIPTION The KMZ11B1 is a sensitive magnetic field sensor, employing the magnetoresistive effect of thin-film permalloy. Its properties enable this sensor to be used in a wide range of applications for current and field measurement, revolution counters, angular or linear displacement sensors, proximity detectors, etc. The sensor can be operated at any frequency between DC and 1 MHz. PINNING PIN 1 2 3 4 5 to 8 SYMBOL +VO GND -VO VCC n.c. DESCRIPTION output voltage ground output voltage supply voltage not connected
pin 1 index
KMZ11B1
8 handbook, halfpage
5
Hy Hx
1
4
MGD804
Fig.1 Simplified outline.
QUICK REFERENCE DATA SYMBOL VCC Hy Hx S Rbridge Voffset PARAMETER bridge supply voltage magnetic field strength auxiliary field sensitivity bridge resistance offset voltage - -2 - - 1.9 -1.5 MIN. 5 - 3 4 - - TYP. - +2 - - 2.9 +1.5 MAX. V kA/m kA/m mV V ---------------kA m k mV/V UNIT
CIRCUIT DIAGRAM
MLC716
handbook, full pagewidth
1 +VO
2 GND
3 -VO
4 VCC
Fig.2 Simplified circuit diagram.
1996 Dec 11
2
Philips Semiconductors
Preliminary specification
Magnetic field sensor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCC Ptot Tstg Tbridge PARAMETER bridge supply voltage total power dissipation storage temperature bridge operating temperature up to Tamb = 130 C CONDITIONS - - -65 -40 MIN.
KMZ11B1
MAX. 12 120 +150 +150 V
UNIT mW C C
handbook, halfpage
150
MSA927
P tot (mW) 100
50
0 0 50 100 Tamb (o C) 150
Fig.3 Power derating curve.
1996 Dec 11
3
Philips Semiconductors
Preliminary specification
Magnetic field sensor
THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient VALUE 155
KMZ11B1
UNIT K/W
CHARACTERISTICS Tamb = 25 C; Hx = 3 kA/m, note 1; VCC = 5 V unless otherwise specified. SYMBOL VCC Hy S TCVO PARAMETER bridge supply voltage magnetic field strength sensitivity temperature coefficient of output voltage open circuit VCC = 5 V; Tamb = -25 to +125 C ICC = 3 mA; Tamb = -25 to +125 C Rbridge TCRbridge Voffset TCVoffset FL bridge resistance temperature coefficient of bridge resistance offset voltage offset voltage drift linearity deviation of output voltage Tbridge = -25 to +125 C Hy = 0 to 1 kA/m Hy = 0 to 1.6 kA/m Hy = 0 to 2 kA/m FH f Note 1. In applications with Hx < 3 kA/m the sensor has to be reset before first operation by application of an auxiliary field Hx = 3 kA/m. hysteresis of output voltage operating frequency Tbridge = -25 to +125 C CONDITIONS - -2 3.2 - - 1.9 - -1.5 -3 - - - - 0 MIN. 5 - - -0.4 -0.1 - 0.3 - - - - - - - TYP. - +2 4.8 - - 2.9 - +1.5 +3 0.5 1.7 4 1 1 MAX. V kA/m mV V ---------------kA m %/K %/K k %/K mV/V V V --------------K %FS %FS %FS %FS MHz UNIT
1996 Dec 11
4
Philips Semiconductors
Preliminary specification
Magnetic field sensor
KMZ11B1
Hd (kA/m)
Hy > 1 kA/m
(2)
,,,,,, ,,,,,, ,,,,,, ,,,,,, ,,,,,, ,,,,,, ,,,,,, ,,,,,,
20 Hx Hd Hy 10 0 Hy > 1 kA/m 2 0 1 3
MSA925
2 S (H ) x S (3 kA/m)
MSA924
1
safe operating area (1)
0
4 5 Hx (kA/m)
0
1
2
3
4 5 Hx (kA/m)
In applications with Hx < 3 kA/m, the sensor has to be reset, after leaving the SOAR, by an auxiliary field of Hx = 3 kA/m. (1) Region of permissible operation. (2) Permissible extension if Hy < 1 kA/m.
In applications with Hx 3 kA/m, the sensor has to be reset by an auxiliary field of Hx = 3 kA/m before use.
Fig.4
Safe Operating Area (permissible disturbing field Hd as a component of auxiliary field Hx).
Fig.5
Relative sensitivity (ratio of sensitivity at certain Hx and sensitivity at Hx = 3 kA/m).
APPLICATION INFORMATION
MSA926
8 Vo (mV/V) 4
max typ min
The leadframe material is a copper alloy containing 2% iron. In applications with magnetic fields outside the specified operating range an increasing hysteresis effect will arise due to magnetization effects in the leadframe. However, in angular measurement applications of the KMZ11B1 in combination with strong magnetic fields H > 50 kA/m there is no additional hysteresis present.
0
4
8 2 1 0 1 H y (kA/m) 2
Hx = 3 kA/m; Tamb = 25 C; Voffset = 0.
Fig.6 Sensor output characteristics.
1996 Dec 11
5
Philips Semiconductors
Preliminary specification
Magnetic field sensor
PACKAGE OUTLINE SO8: plastic small outline package; 8 leads; body width 3.9 mm
KMZ11B1
SOT96-1
D
E
A X
c y HE vMA
Z 8 5
Q A2 A1 pin 1 index Lp 1 e bp 4 wM L detail X (A 3) A
0
2.5 scale
5 mm
DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT mm inches A max. 1.75 A1 0.25 0.10 A2 1.45 1.25 A3 0.25 0.01 bp 0.49 0.36 c 0.25 0.19 D (1) 5.0 4.8 0.20 0.19 E (2) 4.0 3.8 0.16 0.15 e 1.27 HE 6.2 5.8 L 1.05 Lp 1.0 0.4 Q 0.7 0.6 v 0.25 0.01 w 0.25 0.01 y 0.1 Z (1) 0.7 0.3
0.010 0.057 0.069 0.004 0.049
0.019 0.0100 0.014 0.0075
0.244 0.039 0.028 0.050 0.041 0.228 0.016 0.024
0.028 0.004 0.012
8 0o
o
Notes 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. 2. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION SOT96-1 REFERENCES IEC 076E03S JEDEC MS-012AA EIAJ EUROPEAN PROJECTION
ISSUE DATE 95-02-04 97-05-22
1996 Dec 11
6
Philips Semiconductors
Preliminary specification
Magnetic field sensor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
KMZ11B1
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1996 Dec 11
7
Philips Semiconductors - a worldwide company
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For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1996
Internet: http://www.semiconductors.philips.com
SCA52
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
147021/00/03/pp8
Date of release: 1996 Dec 11
Document order number:
9397 750 01582

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